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2PA1576 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce 2PA1576
Description  PNP general-purpose transistor
Download  7 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

2PA1576 Fiches technique(HTML) 3 Page - NXP Semiconductors

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2PA1576_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
3 of 7
NXP Semiconductors
2PA1576
PNP general-purpose transistor
7.
Characteristics
[1]
Pulse test: tp ≤ 300 μs; δ≤ 0.02.
Table 6.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base
cut-off current
IE =0 A; VCB = −30 V
-
-
−100
nA
IE =0 A; VCB = −30 V;
Tj = 150 °C
--
−5
μA
IEBO
emitter-base
cut-off current
IC =0 A; VEB = −4V
-
-
−100
nA
hFE
DC current gain
IC = −1mA; VCE = −6V
2PA1576Q
120
-
270
2PA1576R
180
-
390
2PA1576S
270
-
560
VCEsat
collector-emitter
saturation
voltage
IC = −50 mA;
IB = −5mA
[1] --
−500
mV
Cc
collector
capacitance
IE =ie =0 A;
VCB = −12 V; f = 1 MHz
-2.5
3.5
pF
fT
transition
frequency
IC = −2mA;
VCE = −12 V;
f = 100 MHz
100
--MHz


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