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SS8117GT631TB Fiches technique(PDF) 2 Page - Silicon Standard Corp.

No de pièce SS8117GT631TB
Description  1A Adjustable Low-Dropout Regulator
Download  6 Pages
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Fabricant  SSC [Silicon Standard Corp.]
Site Internet  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SS8117GT631TB Fiches technique(HTML) 2 Page - Silicon Standard Corp.

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ABSOLUTE MAXIMUM RATINGS
(Note 1)
Input Voltage………………………………………………………………………………………….…7V
Power Dissipation Internally Limited
(Note 2)
Maximum Junction Temperature…...…………………………………………………………….…..150°C
Storage Temperature Range…..……………………………………….................…………..-65°C
≤ T
J
≤+150°C
Reflow Temperature (soldering, 10secs)
SOT 223 Package…….……………………………………………………….....…..…………....260°C
Continuous Power Dissipation (TA = +25°C)
SOT 223
(1) ……………………...……………………………………………………………………..0.8W
Note
(1): See Recommended Minimum Footprint
OPERATING CONDITIONS
(Note 1)
(VIN-VADJ) Voltage………..……………………………………………….......……………….……2.5V~6.5V
Temperature Range…………………………………………………………...............….……..-40°C
≤ T
J
≤85°C
ELECTRICAL CHARACTERISTICS
Operating Conditions: VIN
≤ 6.5V, TJ = 25°C unless otherwise specified. [Note3]
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Reference Voltage
VIN - VOUT = 2V, IOUT = 10mA
1.225
1.250
1.275
V
Line Regulation
(VOUT + 1.5V) < VIN < 6.5V, IOUT = 10mA
1.32
%
Load Regulation
(VIN - VOUT) = 2V, 10mA < IOUT < 800mA
0.04
%
Dropout Voltage
∆V
OUT = 2%, IOUT = 800mA
1.2
1.3
V
Current Limit
(VIN - VOUT) = 2V
1000
1200
mA
Adjust Pin Current Change
VIN - VOUT = 2V, 10mA < IOUT < 1mA
0.15
µA
Minimum Load Current
1.5V < (VIN - VOUT) < 5.25V
10
mA
Quiescent Current
VIN - VOUT = 2V
80
µA
Ripple Rejection
f = 120Hz, COUT = 10µF Tantalum,
(VIN - VOUT) = 3V, IOUT = 800mA
50
dB
Thermal Regulation
TA = 25°C, 30ms pulse
0.004
0.02
%/W
Temperature Stability
VIN = 4V, IO =10mA
0.3
%
RMS Output Noise (% of VOUT)
TA = 25°C, 10Hz < f < 10kHz, ILOAD = 10mA
0.007
%
Thermal Resistance,Junction-to-Ambient
(No heat sink; No air flow)
SOT-223; Recommended Minimum Footprint
156
°C/W
Thermal Shutdown
Junction Temperature
150
°C
Thermal Shutdown Hysteresis
10
°C
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions
are conditions under which the device functions but the specifications might not be guaranteed. For guaran-
teed specifications and test conditions see the Electrical Characteristics.
Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal re-
s istance,
θ
JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient te m-
perature is Tjmax-TA / θJA. If this dissipation is exceeded, the die temperature will rise above 150°C and the IC
will go into thermal shutdown. For the SS8117G in SOT 223 package,
θ
JA is 156°C/W (See recommended
minimum footprint). For safe operation in SOT 223 package, see “Typical Performance Characteristics” (Safe
Operating Area).
Note3: Low duty cycle pulse techniques are used during test to maintain junction te mperature as close to
SS8117G
5/26/2005 Rev.2.2
ambient temperature as possible.
Note4: The output capacitor should be tantalum or aluminum .
∆V
OUT = 2%, IOUT = 1A
1.3
1.4
V


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