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SB2580CT Fiches technique(PDF) 1 Page - Won-Top Electronics |
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SB2580CT Fiches technique(HTML) 1 Page - Won-Top Electronics |
1 / 3 page SB2520CT – SB25100CT 1 of 3 © 2002 Won-Top Electronics SB2520CT – SB25100CT 25A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip B ! Guard Ring for Transient Protection ! High Current Capability, Low Forward C ! Low Reverse Leakage Current ! High Surge Current Capability G A ! Plastic Material has UL Flammability Classification 94V-O PIN1 2 3 D Mechanical Data F E ! Case: TO-220 Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-750, Method 2026 ! Polarity: As Marked on Body I ! Weight: 2.24 grams (approx.) L ! Mounting Position: Any H ! Marking: Type Number PIN 1 - + J PIN 3 - Case PIN 2 K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB 2520CT SB 2530CT SB 2540CT SB 2550CT SB 2560CT SB 2580CT SB 25100CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 100 V RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V Average Rectified Output Current @TC = 95°C IO 25 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Forward Voltage @IF = 12.5A VFM 0.55 0.75 0.85 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 100 mA Typical Junction Capacitance (Note 1) Cj 1100 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS TO-220 Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 2.41 2.67 All Dimensions in mm |
Numéro de pièce similaire - SB2580CT |
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Description similaire - SB2580CT |
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