SM6K2

Transistors

Rev.B

1/4

4V Drive Nch+Nch MOS FET

SM6K2

Structure

External dimensions (Unit : mm)

Silicon N-channel

MOSFET transistor

Features

1) Two RHU002N06 chips in a SMT package.

2) Mounting possible with SMT3 automatic mounting machines.

3) Transistor elements are independent, eliminating mutual

interference.

4) Mounting cost and area can be cut in half.

Packaging specifications

Equivalent circuit

SM6K2

Type

T110

3000

Package

Code

Basic ordering unit (pieces)

Taping

Absolute maximum ratings (Ta=25

°C)

<It is the same ratings for the Tr1 and Tr2.>

Drain-source voltage

Gate-source voltage

Drain current

Drain reverse current

Total power dissipation

Channel temperature

Storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 With each pin mounted on the recommended lands.

Tch

60

V

V

mA

mA

mW / TOTAL

°C

±20

200

mA

mA

800

200

800

300

mW / ELEMENT

200

150

Tstg

°C

−55 to +150

Symbol

Limits

Unit

Parameter

∗1

∗1

∗2

Thermal resistance

Parameter

°C / W / TOTAL

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

∗ With each pin mounted on the recommended lands.

416.7

°C / W / ELEMENT

625

∗

Each lead has same dimensions

SMT6

(6)

(5)

(4)

0.15

0.3

1.1

0.8

(3)

1.9

2.9

0.95

(2)

0.95

(1)

1pin mark

Abbreviated symbol : K2

∗1 Gate Protection Diode

∗2 Body Diode

(4)

(5)

(6)

(1)

(2)

(3)

∗1

∗1

∗2

∗2

(1) TR1 Drain

(2) TR2 Gate

(3) TR2 Source

(4) TR2 Drain

(5) TR1 Gate

(6) TR1 Source

and the source to protect against static electricity

when the product is in use.

Use the protection circuit when fixed voltages are exceeded.