BC558A datasheet(2/3 Pages) RECTRON

No de pièce	BC558A

Description	PNP Silicon Planar Epitaxial Transistors

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Fabricant	RECTRON [Rectron Semiconductor]

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BC556,A,B,C

BC557,A,B,C

BC558,A,B,C

MIN TYP MAX

65

45

30

80

50

30

5

15

4

0.20

15

0.20

15

0.20

15

4

0.55 0.66 0.70

0.82

0.09

0.30

0.25

0.65

0.70

0.90

90

150

270

75

475

75

800

110

180

220

200

290

450

420

500

800

120

200

400

IE = 100uA, IC = 0

nA

BC556

VCE = 80V

nA

ICES

VCE = 80V, Tj = 125

oC

uA

BC558

IC = 100uA, IE = 0

V

BC556

BC557

BC558

IC = 2mA, IB = 0

Collector Emitter Voltage

BC556

V

BC557

ICBO

BC558

VCEO

Collector Cut off Current

VEBO

Collector Base Voltage

VCBO

IC = 100mA, IB = 5mA

Base Emitter Saturation Voltage

VBE(Sat)

IC = 10mA, IB = 0.5mA

B

hFE

C

A

BC556

V

IC = 100mA, IB = 5mA

VCE = 5V, IC = 100mA

BC556

Base Emitter On Voltage

TEST CONDITION

VBE(on)

IC = 2mA, VCE = 5V

IC = 10mA, VCE = 5V

Collector Cut off Current

VCE = 5V, IC = 2mA

Emitter Base Voltage

uA

BC557

VCE = 50V, Tj = 125

oC

uA

UNITS

Collector Emitter Saturation Voltage

IC = 10mA, IB = 0.5mA

VCB = 30V, IE = 0

DESCRIPTION

SYMBOL

VCB = 30V, IE = 0, Tj = 150

oC

DC Current Gain

C

B

A

BC557

VCE = 50V

nA

VCE = 5V, IC = 10uA

BC558

VCE = 30V

VCE = 30V, Tj = 125

oC

V

VCE(Sat)

V

nA

uA

A

B

C

BC557/BC558

Electrical Characteristics (Ta=25

oC unless otherwise specified)

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