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1N4454 Fiches technique(PDF) 1 Page - Microsemi Corporation |
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1N4454 Fiches technique(HTML) 1 Page - Microsemi Corporation |
1 / 2 page 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Silicon Switching Diode DO-35 Glass Package 1N4454, 1N4454-1 Features Six sigma quality Metallurgically bonded BKC's Sigma Bond™ plating for problem free solderability LL-34/35 MELF SMD available Full approval to Mil-S-19500 /144 Available up to JANTXV-1 levels "S" level screening available to Source Control Drawings Applications Used in general purpose applications, where performance and switching speed are important. Maximum Ratings Symbol Value Unit Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC PIV 75 (Min.) Volts Average Rectified Current I Avg 200 mAmps Continuous Forward Current I Fdc 300 mAmps Peak Surge Current (t peak = 1 sec.) I peak 1.0 Amp Power Dissipation T L= 50 oC, L = 3/8" from body P tot 500 mWatts Operating Temperature Range T Op 200 o C Storage Temperature Range T St -65 to +200 o C Electrical Characteristics @ 25 oC* Symbol Limits Unit Forward Voltage @ I F= 10 mA V F 1.0(max) Volts Breakdown Voltage @ I R = 5 µA PIV 75 (min) Volts Reverse Leakage Current @ V R = 50 V I R 0.1 (max) µA Reverse Leakage Current @ V R = 50 V, T=150 o C I R 100 (max) µA Capacitance @ V R = 0 V, f = 1mHz C T 2.0 (max) pF Reverse Recovery Time (note 1)/(note 2) t rr 2.0/4.0 (max) nSecs Forward Recovery Voltage (note 3) V fr 3.0 (max) Volts Note 1: Per Method 4031-A with I F = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. Note 2: Per Method 4031-A with I F = 10 mA, R L = 100 Ohms, Vr = 6 V, Recover to 1.0 mA. Note 3: Per Method 4026 with I F = 100 mA, RL = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe- tition Rate = 5 - 100 KHz. DO-35 Glass Package Dia. 0.06-0.09" 1.0" 25.4 mm (Min.) Length 0.120-.200" 3.05-5.08- m m 1.53-2.28m m 0 .0 18-0 .0 22" 0 .458-0 .558m m L ea dDi a . * Unless Otherwise Specified |
Numéro de pièce similaire - 1N4454 |
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Description similaire - 1N4454 |
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