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BAXXDD0 Datasheet(Fiches technique) 7 Page - Rohm

Numéro de pièce BAXXDD0
Description  BAXXDD0_10
Télécharger  10 Pages
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Fabricant  ROHM [Rohm]
Site Internet  http://www.rohm.com
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Technical Note
BA□□DD0 Series,BA□□CC0 Series,
BA□□DD0W Series,BA□□CC0W Series
7/9
www.rohm.com
2010.02 - Rev.B
© 2010 ROHM Co., Ltd. All rights reserved.
Vo Terminal
Fig.32 Output Equivalent Circuit
Fig.33 ESR-Io Characteristics
Fig.34 ESR vs Io Characteristics
(BA□□CC0)
(B A□□DD0)
Please attach an anti-oscillation capacitor between Vcc and GND. The capacitance of the capacitor may significantly change
due to factors such as temperature changes, making it impossible to completely stop oscillations. Please use a tantalum
capacitor or aluminum electrolysis capacitor with favorable characteristics and small internal series resistance (ESR) even at
low temperatures. The output fluctuates regardless of whether the ESR is large or small. Please use the IC within the stable
operating region while referring to the ESR characteristics reference data shown in Figs.32 through 34. In applications where
there are sudden load fluctuations, the use of a capacitor with large capacitance is recommended.
Other Points of Caution
1)Protection Circuits
Over-current Protection Circuit
A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when there
are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted
and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor.
However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not
suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent
protection circuit has negative current capacity characteristics with regard to temperature (Refer to Figs.4 and 16).
Thermal Shutdown Circuit (Thermal Protection)
This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage.
As shown above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be
continuously exceeded, the chip temperature Tj increases, causing the temperature protection circuit to operate.
When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation
immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to
Figs.12 and 24 for the temperatures at which the temperature protection circuit operates).
There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to
avoid leaving the IC in the overloaded state.
Reverse Current
In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode
be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.35).
2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation layer
between each devise, as shown in Fig.36. A P-N junction is formed between
this P-layer and the N-layer of each device, and the P-N junction operates as
a parasitic diode when the electric potential relationship is GND> Terminal A,
GND> Terminal B, while it operates as a parasitic transistor when the electric
potential relationship is Terminal B GND> Terminal A. Parasitic devices are
structurally inevitable in the IC. The operation of parasitic devices induces
mutual interference between circuits, causing malfunctions and eventually
the destruction of the IC. It is necessary to be careful not to use the IC in
ways that would cause parasitic elements to operate. For example, applying
a voltage that is lower than the GND (P-board) to the input terminal.
200
400
800
1000
0.1
1
10
Stable operating region
100
0
600
Unstable operating region
Unstable operating region
1
0.1
1
10
100
10
100
1000
OUTPUT CURRENT:lo(mA)
OUTPUT CURRENT:lo(mA)
Unstable operating region
Unstable operating region
Stable operating region
OUT
22μF
IC
GND
N
P
N
P+
P+
Parasitic element
or transistor
(Pin B)
B
E
Transistor (NPN)
N
P
N
GND
O
(Pin A)
GND
N
P+
Resistor
Parasitic element
P
N
P
P+
N
(Pin A)
Parasitic element
or transistor
(Pin B)
GND
C
B
E
Parasitic element
GND
Fig. 36:Bypass diode
OUT
Vcc
CTL
GND
Reverse current
Fig. 37: Example of the basic structure of a bipolar IC




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