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2SD1879 Fiches technique(PDF) 1 Page - Wing Shing Computer Components

No de pièce 2SD1879
Description  SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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Fabricant  WINGS [Wing Shing Computer Components]
Site Internet  http://www.wingshing.com/en
Logo WINGS - Wing Shing Computer Components

2SD1879 Fiches technique(HTML) 1 Page - Wing Shing Computer Components

  2SD1879 Datasheet HTML 1Page - Wing Shing Computer Components  
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GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency diode ,
primarily for use in horizontal deflection circuites of
colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0V
1500
V
V
CEO
Collector-emitter voltage (open base)
600
V
I
C
Collector current (DC)
6
A
I
CM
Collector current peak value
12
A
P
tot
Total power dissipation
T
mb
25
60
W
V
CEsat
Collector-emitter saturation voltage
I
C = 5.0A; IB = 1.0A
5
V
I
csat
Collector saturation current
f = 16KHz
A
V
F
Diode forward voltage
I
F=5.0A
1.5
V
t
f
Fall time
I
C=4A,IB1=-1/2IB2=0.8A,VCC=100V
1.0
s
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0V
1500
V
V
CEO
Collector-emitter voltage (open base)
600
V
V
EBO
Emitter-base voltage(open collector)
5
V
I
C
Collector current (DC)
6
A
I
B
Base current (DC)
2
A
I
BM
Base current peak value
4
A
P
tot
Total power dissipation
Tmb
25
60
W
T
stg
Storage temperature
-55
150
T
j
Junction temperature
150
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
I
CE
Collector-emitter cut-off current
V
BE = 0V; VCE = VCESMmax
1.0
mA
I
CES
V
BE = 0V; VCE = VCESMmax
2.0
mA
T
j = 125
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0A; IC = 100mA
V
L = 25mH
V
CEsat
Collector-emitter saturation voltages
I
C = 5.0A; IB = 1.0A
5.0
V
V
BEsat
Base-emitter satuation voltage
I
C = 5.0A; IB = 1.0A
1.5
V
h
FE
DC current gain
I
C = 1.0A; VCE = 5V
8
30
V
F
Diode forward voltage
I
F=5.0A
1.5
V
f
T
Transition frequency at f = 1MHz
I
C = 0.1A; VCE = 10V
3
MHz
C
c
Collector capacitance at f = 1MHz
V
CB = 10V
pF
t
s
Switching times(16KHz line deflecton circuit)
I
C=4A,IB1=-1/2IB2=0.8A,VCC=100V
s
t
f
Turn-off storage time Turn-off fall time
C=4A,IB1=-1/2IB2=0.8A,VCC=100V
1.0
s
ELECTRICAL CHARACTERISTICS
TO-3PML
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276
Fax:(852)2797 8153
Homepage: http://www.wingshing.com
E-mail:
wsccltd@hkstar.com
2SD1879
SILICON DIFFUSED POWER TRANSISTOR


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