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2SCR552P Fiches technique(PDF) 2 Page - Rohm

No de pièce 2SCR552P
Description  Midium Power Transistors (30V / 3A)
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Fabricant  ROHM [Rohm]
Site Internet  http://www.rohm.com
Logo ROHM - Rohm

2SCR552P Fiches technique(HTML) 2 Page - Rohm

  2SCR552P_09 Datasheet HTML 1Page - Rohm 2SCR552P_09 Datasheet HTML 2Page - Rohm 2SCR552P_09 Datasheet HTML 3Page - Rohm 2SCR552P_09 Datasheet HTML 4Page - Rohm 2SCR552P_09 Datasheet HTML 5Page - Rohm  
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Data Sheet
2SCR552P
Electrical characteristic (Ta = 25
C)
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
30
-
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
30
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6-
-
V
IE= 100μA
Collector cut-off current
ICBO
--
1
A VCB= 30V
Emitter cut-off current
IEBO
--
1
A VEB= 4V
Collector-emitter staturation voltage
VCE(sat)
-
200
400
mV IC= 1A, IB= 50mA
DC current gain
hFE
200
-
500
-
VCE= 2V, IC= 500mA
Turn-on time
ton
-25
-
ns
Storage time
tstg
-
300
-
ns
Fall time
tf
-20
-
ns
*1 Pulsed
*2 See switching time test circuit
-15
Collector output capacitance
Cob
Conditions
Parameter
MHz
280
-
VCE= 10V
IE=-100mA, f=100MHz
Transition frequency
fT
-
pF
VCB= 10V, IE=0A
f=1MHz
-
IC= 1.5A,IB1= 150mA,
IB2=-150mA,VCC 10V
*1
*2
*2
*2
*1
~_


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