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2SCR513P Fiches technique(PDF) 1 Page - Rohm |
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2SCR513P Fiches technique(HTML) 1 Page - Rohm |
1 / 5 page 1/4 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Midium Power Transistors (50V / 1A) 2SCR513P Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) 2) High speed switching Applications Driver Inner circuit (Unit : mm) Package Taping Code T100 Basic ordering unit (pieces) 1000 2SCR513P Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6V DC IC 1A Pulsed ICP 2A PD 0.5 W PD 2W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) Packaging specifications Type Parameter Collector current Power dissipation *1 *2 *3 Abbreviated symbol : NC (1) (2) (3) (1) Base (2) Collector (3) Emitter (1) (3) (2) |
Numéro de pièce similaire - 2SCR513P_09 |
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Description similaire - 2SCR513P_09 |
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