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SI2305DS Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI2305DS Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si2305DS Vishay Siliconix Document Number: 70833 S-56947—Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5 0 0.05 0.10 0.15 0.20 0.25 0.30 02468 10 12 0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 02468 10 0.6 0.8 1.0 1.2 1.4 –50 –25 0 25 50 75 100 125 150 0 400 800 1200 1600 2000 024 68 VGS = 4.5 thru 2.5 V 25 _C TC = –55_C Crss Coss Ciss VDS = 4 V ID = 3.5 A VGS = 4.5 V ID = 3.5 A VGS = 4.5 V VGS = 2.5 V 1, 0.5 V 125 _C 1.5 V Output Characteristics Transfer Characteristics Gate Charge On-Resistance vs. Drain Current VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Qg – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) VGS = 1.8 V 2 V |
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