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TSC5327 Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce TSC5327
Description  High Voltage NPN Transistor
Download  4 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5327 Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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Engineer Specification
TSC5327
High Voltage NPN Transistor
2/4
Version: Engineer Specification A
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
1200
--
--
V
Collector-Emitter Breakdown Voltage
IC =5mA, IE =0
BVCEO
800
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
7
--
--
V
Collector Cutoff Current
VCE =800V, IB=0
ICEO
--
--
10
uA
Collector Cutoff Current
VCB =1200V, IE =0
ICBO
--
--
1
mA
Emitter Cutoff Current
VEB = 7V, IC =0
IEBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC=1.5A, IB =0.3A
VCE(SAT)1
---
--
0.6
V
Collector-Emitter Saturation Voltage
IC=2.5A, IB =0.5A
VCE(SAT)2
---
--
2.0
V
Base-Emitter Saturation Voltage
IC=1.5A, IB =0.3A
VBE(SAT)
--
--
1.5
V
DC Current Gain
VCE =5V, IC = 0.2A
VCE =5V, IC = 1A
VCE =5V, IC = 2.5A
hFE
20
10
5
--
--
--
40
--
--
Dynamic
Frequency
VCE =10V, IC =0.2A
fT
--
15
--
MHz
Output Capacitance
VCB =10V, f =1MHz
Cob
--
60
--
pF
Resistive Load Switching Time (Ratings)
Rise Time
tr
1.4
2
uS
Storage Time
tSTG
--
3
5
uS
Fall Time
VCC =250V, IC =1.5A,
IB1=0.3, -IB2=-0.6A,
tP =25uS
tf
--
0.2
0.4
uS
Note: pulse test: pulse width ≤300uS, duty cycle ≤2%


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