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BTA608A3 Fiches technique(PDF) 1 Page - Cystech Electonics Corp. |
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BTA608A3 Fiches technique(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C306A3-S Issued Date : 2005.09.29 Revised Date : Page No. : 1 / 5 BTA608A3 CYStek Product Specification General Purpose PNP Epitaxial Planar Transistor BTA608A3 Features • The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification. • High HFE and excellent linearity • Large current capability and wide SOA • Complementary to BTC536A3 • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) IC -150 mA Collector Current (Pulse) ICP -400 mA Power Dissipation Pd 500 mW Thermal Resistance, Junction to Ambient RθJA 250 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C TO-92 BTA608A3 B:Base C:Collector E:Emitter E C B |
Numéro de pièce similaire - BTA608A3 |
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Description similaire - BTA608A3 |
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