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TD62001P Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce TD62001P
Description  7CH DARLINGTON SINK DRIVER
Download  13 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TD62001P Fiches technique(HTML) 4 Page - Toshiba Semiconductor

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TD62001~004P/AP/F/AF
2001-06-27
4
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST
CIR−
CUIT
TEST CONDITION
MIN
TYP.
MAX
UNIT
VCE = 50 V, Ta = 25°C
50
AP, AF
VCE = 50 V, Ta = 85°C
100
VCE = 35 V, Ta = 25°C
50
F
VCE = 35 V, Ta = 85°C
100
VCE = 35 V, Ta = 25°C
50
Output Leakage
Current
P
ICEX
1
VCE = 35 V, Ta = 75°C
100
µA
IOUT = 350 mA, IIN = 500 µA
1.3
1.6
IOUT = 200 mA, IIN = 350 µA
1.1
1.3
Collector−Emitter Saturation Voltage
VCE (sat)
2
IOUT = 100 mA, IIN = 250 µA
0.9
1.1
V
DC Current Transfer Ratio
hFE
2
VCE = 2 V, IOUT = 350 mA
1000
TD62002
VIN = 20 V, IOUT = 350 mA
1.1
1.7
TD62003
VIN = 2.4 V, IOUT = 350 mA
0.4
0.7
Input Current
(Output On)
TD62004
IIN (ON)
3
VIN = 9.5 V, IOUT = 350 mA
0.8
1.2
mA
P
IOUT = 500 µA, Ta = 75°C
50
65
Input Current
(Output Off)
AP, F, AF
IIN (OFF)
4
IOUT = 500 µA, Ta = 85°C
50
65
µA
IOUT = 350 mA
13.7
TD62002
IOUT = 200 mA
11.4
IOUT = 350 mA
2.6
TD62003
IOUT = 200 mA
2.0
IOUT = 350 mA
4.7
Input Voltage
(Output On)
TD62004
VIN (ON)
5
VCE = 2 V
hFE = 800
IOUT = 200 mA
4.4
V
VR = 50 V, Ta = 25°C
50
AP, AF
VR = 50 V, Ta = 85°C
100
VR = 35 V, Ta = 25°C
50
F
VR = 35 V, Ta = 85°C
100
VR = 35 V, Ta = 25°C
50
Clamp Diode
Reverse Current
P
IR
6
VR = 35 V, Ta = 75°C
100
µA
Clamp Diode Forward Voltage
VF
7
IF = 350 mA
2.0
V
Input Capacitance
CIN
15
pF
P, F
VOUT = 35 V, RL = 87.5 Ω
CL = 15 pF
0.1
Turn−On Delay
AP, AF
tON
8
VOUT = 50 V, RL = 125 Ω
CL = 15 pF
0.1
P, F
VOUT = 35 V, RL = 87.5 Ω
CL = 15 pF
0.2
Turn−Off Delay
AP, AF
tOFF
8
VOUT = 50 V, RL = 125 Ω
CL = 15 pF
0.2
µs


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Numéro de composants électroniques

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