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IXZ318N50 Fiches technique(PDF) 2 Page - IXYS Corporation |
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IXZ318N50 Fiches technique(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXZ318N50 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. RG 1 Ω Ciss 1950 pF Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 175 pF Crss 17 pF Cstray Back Metal to any Pin 33 pF Td(on) 4 ns Ton VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) 4 ns Td(off) 5 ns Toff 6 ns Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 19 A ISM Repetitive; pulse width limited by TJM 114 A VSD IF = Is, VGS=0 V, Pulse test, t ≤ 300 s, duty cycle ≤2% 1.5 V Trr 200 ns Source-Drain Diode For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. |
Numéro de pièce similaire - IXZ318N50 |
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Description similaire - IXZ318N50 |
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