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IXZ318N50 Fiches technique(PDF) 2 Page - IXYS Corporation

No de pièce IXZ318N50
Description  Z-MOS RF Power MOSFET
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXZ318N50 Fiches technique(HTML) 2 Page - IXYS Corporation

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IXZ318N50
Z-MOS RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
RG
1
Ciss
1950
pF
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
175
pF
Crss
17
pF
Cstray
Back Metal to any Pin
33
pF
Td(on)
4
ns
Ton
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 Ω (External)
4
ns
Td(off)
5
ns
Toff
6
ns
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
IS
VGS = 0 V
19
A
ISM
Repetitive; pulse width limited by TJM
114
A
VSD
IF = Is, VGS=0 V, Pulse test, t ≤ 300 s, duty cycle
≤2%
1.5
V
Trr
200
ns
Source-Drain Diode
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.


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