MC-4R256CPE6C-845 datasheet(8/16 Pages) ELPIDA

No de pièce	MC-4R256CPE6C-845

Description	Direct Rambus??DRAM RIMM??Module 256M-BYTE (128M-WORD x 16-BIT)

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Fabricant	ELPIDA [Elpida Memory]

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Preliminary Data Sheet E0043N11

8

MC-4R256CPE6C

Electrical Specification

Absolute Maximum Ratings

Symbol

Parameter

MIN.

MAX.

Unit

VI,ABS

Voltage applied to any RSL or CMOS signal pad with respect to GND

−0.3

VDD + 0.3

V

VDD,ABS

Voltage on VDD with respect to GND

−0.5

VDD + 1.0

V

TSTORE

Storage temperature

−50

+100

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Recommended Electrical Conditions

Symbol

Parameter and conditions

MIN.

MAX.

Unit

VDD

Supply voltage

2.50

− 0.13

2.50 + 0.13

V

VCMOS

CMOS I/O power supply at pad

2.5V controllers

2.5

− 0.13

2.5 + 0.25

V

1.8V controllers

1.8

− 0.1

1.8 + 0.2

VREF

Reference voltage

1.4

− 0.2

1.4 + 0.2

V

VIL

RSL input low voltage

VREF

− 0.5

VREF

− 0.2

V

VIH

RSL input high voltage

VREF + 0.2

VREF + 0.5

V

VIL,CMOS

CMOS input low voltage

−0.3

0.5VCMOS

− 0.25

V

VIH,CMOS

CMOS input high voltage

0.5VCMOS+0.25

VCMOS + 0.3

V

VOL,CMOS

CMOS output low voltage, IOL,CMOS = 1 mA

—

0.3

V

VOH,CMOS

CMOS output high voltage, IOH,CMOS =

−0.25 mA

VCMOS

− 0.3

—

V

IREF

VREF current, VREF,MAX

−160.0

+160.0

µA

ISCK,CMD

CMOS input leakage current, (0

≤ VCMOS ≤ VDD)

−160.0

+160.0

µA

ISIN,SOUT

CMOS input leakage current, (0

≤ VCMOS ≤ VDD)

−10.0

+10.0

µA

Numéro de pièce similaire - MC-4R256CPE6C-845

Fabricant	No de pièce	Fiches technique	Description
NEC	MC-4R256CPE6C-845	133Kb / 6P	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT

More results

Description similaire - MC-4R256CPE6C-845

Fabricant	No de pièce	Fiches technique	Description
Elpida Memory	MC-4R256FKE6D-840	490Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
NEC	MC-4R256CEE6B	129Kb / 16P	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
Elpida Memory	MC-4R256FKE6D	116Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
NEC	MC-4R256CPE6C	133Kb / 6P	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
Elpida Memory	MC-4R256FKE8D	116Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R256FKE8D-840	128Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R256FKE8S-840	124Kb / 14P	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R256FKE8S	126Kb / 14P	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R512FKE6D	132Kb / 14P	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
NEC	MC-4R128CEE6B	129Kb / 16P	Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT

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MC-4R256CPE6C-845 Fiches technique(PDF) 8 Page - Elpida Memory

MC-4R256CPE6C-845 Fiches technique(HTML) 8 Page - Elpida Memory

Numéro de pièce similaire - MC-4R256CPE6C-845

Description similaire - MC-4R256CPE6C-845

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