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TPCP8004 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPCP8004
Description  Field Effect Transistor Silicon N Channel MOS Type (U-MOS??
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8004 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPCP8004
2008-12-18
2
Thermal Characteristics
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD =24V, Tch = 25°C (initial), L =0.2mH, RG = 1 Ω, IAR =8.3 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ●on the lower left of the marking indicates Pin 1.
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Rth (ch-a)
74.4
°C/W
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
148.8
°C/W
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)


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