TPCA8026 datasheet(3/7 Pages) TOSHIBA

No de pièce	TPCA8026

Description	Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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TPCA8026

2008-06-26

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

nA

Drain cutoff current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

10

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

⎯

2.5

V

VGS = 4.5 V, ID = 23 A

⎯

2.7

4.5

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 23 A

⎯

1.8

2.2

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 23 A

50

100

⎯

S

Input capacitance

Ciss

⎯

4200

⎯

Reverse transfer capacitance

Crss

⎯

1000

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

1400

⎯

pF

Rise time

tr

⎯

15

⎯

Turn-on time

ton

⎯

30

⎯

Fall time

tf

⎯

36

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

111

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

113

⎯

Gate-source charge 1

Qgs1

⎯

13

⎯

Gate-drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 45 A

⎯

42

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

135

A

Forward voltage (diode)

VDSF

IDR = 45 A, VGS = 0 V

⎯

−1.2

V

VDD ≈ 15 V

0 V

VGS

10 V

ID = 23A

VOUT

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