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2SK1365 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SK1365
Description  FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1365 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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2SK1365
2002-09-02
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1365
Switching Power Supply Applications
Low drain−source ON resistance
: RDS (ON) = 1.5 Ω (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)
Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
1000
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
1000
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
7
Drain current
Pulse (Note 1)
IDP
21
A
Drain power dissipation (Tc = 25°C)
PD
90
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.39
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
41.6
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)


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