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PS21965-ST Fiches technique(PDF) 8 Page - Mitsubishi Electric Semiconductor

No de pièce PS21965-ST
Description  Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
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Fabricant  MITSUBISHI [Mitsubishi Electric Semiconductor]
Site Internet  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS21965-ST Fiches technique(HTML) 8 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21965-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
Mar. 2009
8
Bootstrap negative electrodes
should be connected to U, V,
W terminals directly and
separated from the main output
wires.
WOUT
VOUT
C3
C2
C2
C1
C1
C2 C1
UOUT
WP
VWB
VP
VVB
15V line
5V line
UP
COM
UOUT
VOUT
VNO
WOUT
CIN
GND
F
o
WN
VN
VCC
C
A
CIN
NW
NV
NU
W
V
U
P
VWS
VVS
VUS
VUB
VCC
Fo
WN
VN
UN
UN
WP
VP
UP
VNC
VNC
VN1
VP1
VUFB
VVFB
VWFB
C3
HVIC
LVIC
M
Long wiring here might
cause short-circuit.
Long wiring here might cause
SC level fluctuation and
malfunction.
Long GND wiring here might
generate noise to input and
cause IGBT malfunction.
Comparator
C4
R1
B
Vref
C4
R1
B
Vref
C4
N1
R1
B
Vref
OR Logic
External protection circuit
Shunt resistors
-
+
-
+
-
+
Note 1 : Input drive is High-Active type. There is a 3.3k
Ω(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each in-
put should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage.
2: Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
3: FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10k
Ω.
4: To prevent erroneous protection, the wiring of A, B, C should be as short as possible.
5: The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2
µs. SC interrupting time might vary with the
wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4.
6: All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency character-
istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.)
7: To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.
Generally a 0.1-0.22
µF snubber between the P-N1 terminals is recommended.
8: Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
9: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended
to connect control GND and power GND at only a point.
11 : The reference voltage Vref of comparator should be set up the same rating of short circuit trip level (Vsc(ref): min.0.43V to max.0.53V).
12 : OR logic output high level should exceed the maximum short circuit trip level (Vsc(ref): max.0.53V).
Fig. 6 AN EXAMPLE OF TYPICAL DIPIPM APPLICATION CIRCUIT
C1: Electrolytic capacitor with good temperature characteristics
C2,C3: 0.22~2
µF R-category ceramic capacitor for noise filtering


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