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KF10N60PR Fiches technique(PDF) 2 Page - KEC(Korea Electronics)

No de pièce KF10N60PR
Description  N CHANNEL MOS FIELD EFFECT TRANSISTOR
Download  7 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KF10N60PR Fiches technique(HTML) 2 Page - KEC(Korea Electronics)

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2008. 11. 12
2/7
KF10N60PR/FR
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25
)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =7.3mH, IS=10A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 10A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width
300
, Duty Cycle
2%.
Note 5) Essentially independent of operating temperature.
2
PRODUCT NAME
LOT NO
1
813
2
KF10N60
FR
1
801
2
KF10N60
PR
1
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250 A, VGS=0V
600
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS/ Tj ID=250 A, Referenced to 25
-
0.6
-
V/
Drain Cut-off Current
IDSS
VDS=600V, VGS=0V
-
-
10
A
Gate Threshold Voltage
Vth
VDS=VGS, ID=250 A
2
-
4
V
Gate Leakage Current
IGSS
VGS= 30V, VDS=0V
-
-
100
nA
Drain-Source ON Resistance
RDS(ON)
VGS=10V, ID=5A
-
0.59
0.69
Dynamic
Total Gate Charge
Qg
VDS=480V, ID=10A
VGS=10V
(Note4,5)
-
29.5
-
nC
Gate-Source Charge
Qgs
-
6.5
-
Gate-Drain Charge
Qgd
-
12.5
-
Turn-on Delay time
td(on)
VDD=300V
ID=10A
RG=25
(Note4,5)
-
32
-
ns
Turn-on Rise time
tr
-
35
-
Turn-off Delay time
td(off)
-
88
-
Turn-off Fall time
tf
-
30.5
-
Input Capacitance
Ciss
VDS=25V, VGS=0V, f=1.0MHz
-
1255
-
pF
Output Capacitance
Coss
-
160
-
Reverse Transfer Capacitance
Crss
-
16.5
-
Source-Drain Diode Ratings
Continuous Source Current
IS
VGS<Vth
-
-
10
A
Pulsed Source Current
ISP
-
-
40
Diode Forward Voltage
VSD
IS=10A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=10A, VGS=0V,
dIs/dt=100A/ s
-
150
-
ns
Reverse Recovery Charge
Qrr
-
1.0
-
C


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