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KF10N60PR Fiches technique(PDF) 2 Page - KEC(Korea Electronics) |
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KF10N60PR Fiches technique(HTML) 2 Page - KEC(Korea Electronics) |
2 / 7 page 2008. 11. 12 2/7 KF10N60PR/FR Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ) Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =7.3mH, IS=10A, VDD=50V, RG=25 , Starting Tj=25 . Note 3) IS 10A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 . Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 813 2 KF10N60 FR 1 801 2 KF10N60 PR 1 Marking CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.6 - V/ Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=5A - 0.59 0.69 Dynamic Total Gate Charge Qg VDS=480V, ID=10A VGS=10V (Note4,5) - 29.5 - nC Gate-Source Charge Qgs - 6.5 - Gate-Drain Charge Qgd - 12.5 - Turn-on Delay time td(on) VDD=300V ID=10A RG=25 (Note4,5) - 32 - ns Turn-on Rise time tr - 35 - Turn-off Delay time td(off) - 88 - Turn-off Fall time tf - 30.5 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 1255 - pF Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 16.5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 10 A Pulsed Source Current ISP - - 40 Diode Forward Voltage VSD IS=10A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=10A, VGS=0V, dIs/dt=100A/ s - 150 - ns Reverse Recovery Charge Qrr - 1.0 - C |
Numéro de pièce similaire - KF10N60PR |
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Description similaire - KF10N60PR |
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