Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

KF5N50FR Fiches technique(PDF) 2 Page - KEC(Korea Electronics)

No de pièce KF5N50FR
Description  N CHANNEL MOS FIELD EFFECT TRANSISTOR
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KF5N50FR Fiches technique(HTML) 2 Page - KEC(Korea Electronics)

  KF5N50FR Datasheet HTML 1Page - KEC(Korea Electronics) KF5N50FR Datasheet HTML 2Page - KEC(Korea Electronics) KF5N50FR Datasheet HTML 3Page - KEC(Korea Electronics) KF5N50FR Datasheet HTML 4Page - KEC(Korea Electronics) KF5N50FR Datasheet HTML 5Page - KEC(Korea Electronics) KF5N50FR Datasheet HTML 6Page - KEC(Korea Electronics) KF5N50FR Datasheet HTML 7Page - KEC(Korea Electronics)  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
2008. 10. 10
27
KF5N50PR/FR/PS/FS
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250㎂ , VGS=0V
500
-
-
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
-
0.55
-
V/℃
Drain Cut-off Current
IDSS
VDS=500V, VGS=0V,
-
-
10
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
2.0
-
4.0
V
Gate Leakage Current
IGSS
KF5N50PR/FR
VGS=±30V, VDS=0V
-
-
±100
nA
KF5N50PS/FS
VGS=±25V, VDS=0V
-
-
±10
Drain-Source ON Resistance
RDS(ON)
VGS=10V, ID=2.5A
-
1.15
1.4
Dynamic
Total Gate Charge
Qg
VDS=400V, ID=5A
VGS=10V
(Note4,5)
-
12
-
nC
Gate-Source Charge
Qgs
-
2.4
-
Gate-Drain Charge
Qgd
-
5.4
-
Turn-on Delay time
td(on)
VDD=250V
RL=50Ω
RG=25Ω
(Note4,5)
-
22.5
-
ns
Turn-on Rise time
tr
-
29
-
Turn-off Delay time
td(off)
-
58
-
Turn-off Fall time
tf
-
18
-
Input Capacitance
Ciss
VDS=25V, VGS=0V, f=1.0MHz
-
430
-
pF
Output Capacitance
Coss
-
71
-
Reverse Transfer Capacitance
Crss
-
7.5
-
Source-Drain Diode Ratings
Continuous Source Current
IS
VGS<Vth
-
-
5
A
Pulsed Source Current
ISP
-
-
20
Diode Forward Voltage
VSD
IS=5A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=5A, VGS=0V,
dIs/dt=100A/㎲
-
150
-
ns
Reverse Recovery Charge
Qrr
-
0.42
-
μ
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
813
2
KF5N50
FR
1
801
2
KF5N50
PR
1
2
PRODUCT NAME
LOT NO
1
813
2
KF5N50
FS
1
801
2
KF5N50
PS
1
Marking


Numéro de pièce similaire - KF5N50FR

FabricantNo de pièceFiches techniqueDescription
logo
KEC(Korea Electronics)
KF5N50F KEC-KF5N50F Datasheet
84Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50FSA KEC-KF5N50FSA Datasheet
720Kb / 6P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50FZ KEC-KF5N50FZ Datasheet
84Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50FZA KEC-KF5N50FZA Datasheet
720Kb / 6P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50FZA KEC-KF5N50FZA_15 Datasheet
720Kb / 6P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
More results

Description similaire - KF5N50FR

FabricantNo de pièceFiches techniqueDescription
logo
KEC(Korea Electronics)
KHB7D0N65P1 KEC-KHB7D0N65P1 Datasheet
450Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB6D0N40P KEC-KHB6D0N40P Datasheet
449Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB7D5N60P1 KEC-KHB7D5N60P1_07 Datasheet
501Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB4D0N65P KEC-KHB4D0N65P Datasheet
397Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB4D0N80P1 KEC-KHB4D0N80P1 Datasheet
504Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB4D5N60P KEC-KHB4D5N60P Datasheet
500Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB7D0N65P1 KEC-KHB7D0N65P1_07 Datasheet
501Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60P KEC-KHB2D0N60P Datasheet
501Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF4N80F KEC-KF4N80F_15 Datasheet
389Kb / 6P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF7N60P KEC-KF7N60P_15 Datasheet
401Kb / 7P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF10N65F KEC-KF10N65F_15 Datasheet
388Kb / 6P
   N CHANNEL MOS FIELD EFFECT TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com