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KF5N50DR Fiches technique(PDF) 1 Page - KEC(Korea Electronics) |
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KF5N50DR Fiches technique(HTML) 1 Page - KEC(Korea Electronics) |
1 / 6 page 2008. 12. 3 1/6 SEMICONDUCTOR TECHNICAL DATA KF5N50DR/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・V DSS= 500V, ID= 4.3A ・Drain-Source ON Resistance : R DS(ON)=1.4Ω(Max) @VGS = 10V ・Qg(typ) = 12nC ・t rr(typ) = 150ns MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 4.3 A @TC=100℃ 2.7 Pulsed (Note1) IDP 13 Single Pulsed Avalanche Energy (Note 2) EAS 270 mJ Repetitive Avalanche Energy (Note 1) EAR 8.6 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 20 V/ns Drain Power Dissipation Tc=25℃ PD 59.5 W Derate above 25℃ 0.48 W/℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 2.1 ℃/W Thermal Resistance, Junction-to- Ambient RthJA 110 ℃/W G D S G D S PIN CONNECTION 1. GATE 2. DRAIN 3. SOURCE DPAK (1) DIM MILLIMETERS A A B B C C D D F FF H G K G J L K L M 0.96 MAX 0.90 MAX E E M N H 0.70 MIN N 12 3 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ J (KF5N50DR) (KF5N50DS) |
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Description similaire - KF5N50DR |
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