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2N4118 Fiches technique(PDF) 2 Page - RHOPOINT COMPONENTS |
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2N4118 Fiches technique(HTML) 2 Page - RHOPOINT COMPONENTS |
2 / 17 page 01/99 B-11 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating (to 175°C) 2mW/°C TOÐ18 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case At 25°C free air temperature: 2N4338 2N4339 Process NJ16 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 100 – 100 pA VGS = – 30V, VDS = ØV – 100 – 100 nA VGS = – 30V, VDS = ØV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 1 – 0.6 – 1.8 V VDS = 15V, ID = 0.1 µA Drain Saturation Current (Pulsed) IDSS 0.2 0.6 0.5 1.5 mA VDS = 15V, VGS = ØV Drain Cutoff Current ID(OFF) 0.05 0.05 nA VDS = 15V, VGS = ( ) (– 5) (– 5) V Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 2500 1700 Ω VGS = ØV, ID = Ø A f = 1 kHz Common Source gfs 600 1800 800 2400 µS VDS = 15V, VGS = ØV f = 1 kHz Forward Transconductance Common Source Output Conductance gos 515 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 77 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Crss 33 pF VDS = 15V, VGS = ØV f = 1 MHz Reverse Transfer Capacitance Noise Figure NF 1 1 dB VDS = 15V, VGS = ØV f = 1 kHz RG = 1 MΩ, BW = 200 Hz ¥ Audio Amplifiers ¥ Small Signal Amplifiers ¥ Voltage-Controlled Resistors ¥ Current Limiters & Regulators 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-11 |
Numéro de pièce similaire - 2N4118 |
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Description similaire - 2N4118 |
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