Moteur de recherche de fiches techniques de composants électroniques |
|
ISL3034EIRTZ-T Fiches technique(PDF) 10 Page - Intersil Corporation |
|
ISL3034EIRTZ-T Fiches technique(HTML) 10 Page - Intersil Corporation |
10 / 16 page 10 FN6492.0 March 31, 2009 Best-in-Class ESD Protection All pins on these devices include class 3 (>12kV) Human Body Model (HBM) ESD protection structures, but the input and I/O pins incorporate advanced structures allowing them to survive ESD events in excess of ±15kV HBM and ±15kV to IEC61000-4-2. The I/OVCC pins are particularly vulnerable to ESD damage because they typically connect to an exposed port on the exterior of the finished product. Simply touching the port pins, or connecting a memory card, can cause an ESD event that might destroy unprotected ICs. These new ESD structures protect the device whether or not it is powered up and without degrading the level shifting performance. This built-in ESD protection eliminates the need for board level protection structures (e.g., transient suppression diodes) and the associated, undesirable capacitive load they present. To ensure the full benefit of the built-in ESD protection, connect the IC’s GND pin directly to a low impedance GND plane. IEC61000-4-2 Testing The IEC61000 test method applies to finished equipment, rather than to an individual IC. Therefore, the pins most likely to suffer an ESD event are those that are exposed to the outside world (typically I/OVCC pins in memory card applications) but the ISL3034E, ISL3035E, and ISL3036E feature IEC61000 ESD protection on all logic and I/O pins (both I/OVL and I/OVCC, as well as CLK pins). Unlike HBM and MM methods which only test each pin-to-pin combination without applying power, IEC61000 testing is also performed with the IC in its typical application configuration (power applied). The IEC61000 standard’s lower current limiting resistor coupled with the larger charge storage capacitor yields a test that is much more severe than the HBM test. The extra ESD protection built into these devices’ pins allows the design of equipment meeting level 4 criteria without the need for additional board level protection. AIR-GAP DISCHARGE TEST METHOD For this test method, a charged probe tip moves toward the IC pin until the voltage arcs to it. The current waveform delivered to the IC pin depends on approach speed, humidity, temperature, etc., so it is difficult to obtain repeatable results. All the EN, CLK, and I/O pins withstand ±15kV air-gap discharges, relative to GND. CONTACT DISCHARGE TEST METHOD During the contact discharge test, the probe contacts the tested pin before the probe tip is energized, thereby eliminating the variables associated with the air-gap discharge. The result is a more repeatable and predictable test, but equipment limits prevent testing devices at voltages higher than ±9kV. Devices in this family survive ±9kV contact discharges (relative to the GND pin) on the EN, CLK, and I/O pins. Layout and Decoupling Considerations These level translators’ high data rates and fast signal transitions require that the accelerators have high transient currents. Thus, short, low inductance supply traces and decoupling within 1/8th inch of the IC are imperative with very low impedance GND return paths. Typical Performance Curves VCC = 3.3V, VL = 1.8V, CL = 15pF, RSOURCE = 150Ω, Data Rate = 100Mbps, push-pull driver, TA = +25°C; Unless Otherwise Specified. FIGURE 7. VL SUPPLY CURRENT vs VCC SUPPLY VOLTAGE FIGURE 8. VL SUPPLY CURRENT vs VL SUPPLY VOLTAGE VCC SUPPLY VOLTAGE (V) 0 0.5 1.0 1.5 2.0 2.5 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 VL = 1.8V SWITCHING 6 I/OVL INPUTS SWITCHING 1 I/OVL INPUT SWITCHING 4 I/OVL INPUTS VL SUPPLY VOLTAGE (V) 0 5 10 15 20 25 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 VCC = 3.6V SWITCHING 6 I/OVCC INPUTS 3.2 SWITCHING 4 I/OVCC INPUTS SWITCHING 1 I/OVCC INPUT ISL3034E, ISL3035E, ISL3036E |
Numéro de pièce similaire - ISL3034EIRTZ-T |
|
Description similaire - ISL3034EIRTZ-T |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |