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TPIC1502DW Fiches technique(PDF) 3 Page - Texas Instruments

No de pièce TPIC1502DW
Description  QUAD AND HEX POWER DMOS ARRAY
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

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TPIC1502
QUAD AND HEX POWER DMOS ARRAY
SLIS054 – OCTOBER 1996
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, Q1A, Q1B, Q2A, Q2B, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
ID = 250 µA,
VGS = 0
20
V
VGS(th)
Gate-to-source threshold voltage
ID = 1 mA,
See Figure 5
VDS = VGS,
1.5
1.85
2.2
V
VGS(th)match Gate-to-source threshold voltage matching
ID = 1 mA,
VDS = VGS
40
mV
V(BR)
Reverse drain-to-GND breakdown voltage
Drain-to-GND current = 250
µA
(D1, D2)
20
V
V(BR)GS
Gate-to-source breakdown voltage, Q2C
IGS = 100 µA
6
V
V(BR)SG
Source-to-gate breakdown voltage, Q2C
IGS = 100 µA
0.7
V
V(DS)on
Drain-to-source on-state voltage
ID = 1.5 A,
VGS = 10 V,
See Notes 3 and 4
0.375
0.45
V
VF
Forward on-state voltage, GND-to-VDD1,
GND-to-VDD2
ID = 1.5 A (D1, D2)
See Notes 3 and 4
1.5
V
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1.5 A,
VGS = 0,
See Notes 3 and 4 and Figure 19
0.93
1.2
V
IDSS
Zero gate voltage drain current
VDS = 16 V,
TC = 25°C
0.05
1
µA
IDSS
Zero-gate-voltage drain current
DS
,
VGS = 0
TC = 125°C
0.5
10
µA
IGSSF
Forward gate current, drain short-circuited
to source
VGS = 16 V,
VDS = 0
10
100
nA
IGSSR
Reverse gate current, drain short-circuited
to source
VSG = 16 V,
VDS = 0
10
100
nA
Ilk
Leakage current, VDD1-to-GND,
VDGND =16V
TC = 25°C
0.05
1
µA
Ilkg
g,
DD1
,
VDD2-to-GND, gate shorted to source
VDGND = 16 V
TC = 125°C
0.5
10
µA
rDS( )
Static drain to source on state resistance
VGS = 10 V,
ID = 1.5 A,
TC = 25°C
0.25
0.3
rDS(on)
Static drain-to-source on-state resistance
D
,
See Notes 3 and 4
and Figure 9
TC = 125°C
0.38
0.51
gfs
Forward transconductance
VDS = 14 V,
ID = 750 mA,
See Notes 3 and 4 and Figure 13
0.75
1.2
S
Ciss
Short-circuit input capacitance, common
source
98
Coss
Short-circuit output capacitance, common
source
VDS = 14 V,
f = 1 MHz,
VGS = 0,
See Figure 17
70
pF
Crss
Short-circuit reverse transfer capacitance,
common source
54
αs
Sense-FET drain current ratio
VDS = 6 V,
ID(Q2B) = 1.5 mA
100
150
200
NOTES:
3. Technique should limit TJ – TC to 10°C maximum.
4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
source-to-drain diode characteristics, Q1A, Q2A, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
trr
Reverse-recovery time
IS = 750 mA,
VGS = 0,
VDS = 14 V
di/dt = 100 A/
µs
18
ns
QRR
Total diode charge
VDS = 14 V,
di/dt = 100 A/
µs,
See Figures 1 and 23
14
nC


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