2N4900 datasheet(1/3 Pages) JMNIC

No de pièce	2N4900

Description	Silicon PNP Power Transistors

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Fabricant	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Site Internet	http://www.jmnic.com

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Product Specification

www.jmnic.com

Silicon PNP Power Transistors

2N4898 2N4899 2N4900

DESCRIPTION

・・With TO-66 package

・Low collector-emitter saturation voltage

・Excellent safe operating area

・2N4900 complement to type 2N4912

APPLICATIONS

・Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N4898

40

2N4899

60

VCBO

Collector-base voltage

2N4900

Open emitter

80

V

2N4898

40

2N4899

60

VCEO

Collector-emitter voltage

2N4900

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

1.0

A

ICM

Collector current-peak

4.0

A

IB

Base current

1.0

A

PD

Total Power Dissipation

TC=25℃

25

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

7.0

℃/W

JMnic

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2N4900 Fiches technique(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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