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CSD-S30228M9 Fiches technique(PDF) 4 Page - China Semiconductor Corporation |
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CSD-S30228M9 Fiches technique(HTML) 4 Page - China Semiconductor Corporation |
4 / 7 page CHINA SEMICONDUCTOR Spec. No. CORPORATION Rev. Absolute Maximum Rating - (Ta=25 ) Symbol Unit PAD mW IAF mA Peak Current Per Dice(duty cycle 1/10,1KHz) IPF mA - mA/ VR V Topr Tstg Electro-optical Characteristics - Symbol Min. Typ. Max. Unit VF - 2.1 2.8 V Iv 4 10 - mcd P - 572 - nm e - 570 - nm - 20 - nm IR - - 100 A IV-m - - 2:1 . Page 3/6 Parameter -40 ~ +105 0.33 Forward Voltage Per Segment Luminous Intensity Per Segment Spectrum Radiation Bandwidth Reverse Current Peak Emission Wavelength Dominant Wavelength Luminous Intensity Matching Ratio A (Ta=25 ) Condition Storage Temp. 25 90 Derating Linear From 25 Per Dice IF=20mA IF=20mA VR=5V PS-DD-S30228/S30229M9 5 IF=20mA Model No CSD-S30228/S30229M9 IF=20mA IF=10mA Continuous Forward Current Per Dice Parameter Rating -40 ~ +105 Operating Temp. Power Dissipation Per Dice 70 Reverse Voltage Per Dice IF=10mA http://www.csctw.com.tw |
Numéro de pièce similaire - CSD-S30228M9 |
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Description similaire - CSD-S30228M9 |
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