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ST-2SB1386U Datasheet(Fiches technique) 1 Page - SEMTECH ELECTRONICS LTD.

Numéro de pièce ST-2SB1386U
Description  PNP Silicon Epitaxial Planar Transistor
Télécharger  3 Pages
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

ST-2SB1386U Datasheet(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

  ST-2SB1386U Datasheet HTML 1Page - SEMTECH ELECTRONICS LTD. ST-2SB1386U Datenblatt HTML 2Page - SEMTECH ELECTRONICS LTD. ST-2SB1386U Datenblatt HTML 3Page - SEMTECH ELECTRONICS LTD.  
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Dated : 26/11/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SB1386U
PNP Silicon Epitaxial Planar Transistor
Low frequency transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
30
V
Collector Emitter Voltage
-VCEO
20
V
Emitter Base Voltage
-VEBO
6
V
Collector Current - DC
Collector Current - Pulse
1)
-IC
-ICP
5
10
A
Collector Power Dissipation
PC
0.5
2
W
Junction Temperature
TJ
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
1) Single pulse, P
W = 10 ms.
2) When mounted on a 40 X 40 X 0.7 mm ceramic board.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 2 V, -IC = 500 mA
Current Gain Group
P
Q
R
hFE
hFE
hFE
82
120
180
-
-
-
180
270
390
-
-
-
Collector Base Cutoff Current
at -VCB = 20 V
-ICBO
-
-
0.5
A
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
-
0.5
A
Collector Base Breakdown Voltage
at -IC = 50 A
-V(BR)CBO
30
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
20
-
-
V
Emitter Base Breakdown Voltage
at -IE = 50 A
-V(BR)EBO
6
-
-
V
Collector Emitter Saturation Voltage
at -IC = 4 A, -IB = 100 mA
-VCE(sat)
-
-
1
V
Transition Frequency
at -VCE = 6 V, IE = 50 mA, f = 100 MHz
fT
-
120
-
MHz
Output Capacitance
at -VCB = 20 V, IE = 0, f = 1 MHz
Cob
-
60
-
pF


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