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ST-2SA952 Datasheet(Fiches technique) 1 Page - SEMTECH ELECTRONICS LTD.

Numéro de pièce ST-2SA952
Description  PNP Silicon Epitaxial Planar Transistor
Télécharger  2 Pages
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

ST-2SA952 Datasheet(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

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Dated : 24/05/2008
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SA952
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three group, M, L
and K according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
30
V
Collector Emitter Voltage
-VCEO
25
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
700
mA
Base Current
-IB
150
mA
Power Dissipation
Ptot
600
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Current Gain Group
at -VCE = 1 V, -IC = 700 mA
M
L
K
hFE
hFE
hFE
hFE
90
135
200
50
180
270
400
-
-
-
-
-
Collector Base Cutoff Current
at -VCB = 30 V
-ICBO
-
100
nA
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
100
nA
Collector Emitter Saturation Voltage
at -IC = 700 mA, -IB = 70 mA
-VCE(sat)
-
0.6
V
Base Emitter Saturation Voltage
at -IC = 700 mA, -IB = 70 mA
-VBE(sat)
-
1.2
V
Base Emitter Voltage
at -VCE = 6 V, -IC = 10 mA
-VBE
0.6
0.7
V
Gain Bandwidth Product
at -VCE = 6 V, -IE = 10 mA
fT
50
-
MHz
Collector to Base Capacitance
at -VCB = 6 V, f = 1 MHz
COB
-
40
pF
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package


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