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ST-2SC4375U Datasheet(Fiches technique) 1 Page - SEMTECH ELECTRONICS LTD.

Numéro de pièce ST-2SC4375U
Description  NPN Silicon Epitaxial Planar Transistor
Télécharger  3 Pages
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

ST-2SC4375U Datasheet(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

  ST-2SC4375U Datasheet HTML 1Page - SEMTECH ELECTRONICS LTD. ST-2SC4375U Datenblatt HTML 2Page - SEMTECH ELECTRONICS LTD. ST-2SC4375U Datenblatt HTML 3Page - SEMTECH ELECTRONICS LTD.  
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Dated : 17/04/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SC4375U
NPN Silicon Epitaxial Planar Transistor
High current application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
30
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
1.5
A
Total Power Dissipation
Ptot
0.5
1
1)
W
Junction Temperature
TJ
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
1) When mounted on a 250 mm2 X 0.8 t ceramic substrate.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 2 V, IC = 500 mA
Current Gain Group
O
Y
hFE
hFE
100
160
-
-
200
320
-
-
Collector Base Breakdown Voltage
at IC = 1 mA
V(BR)CBO
30
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
30
-
-
V
Emitter Base Breakdown Voltage
at IE = 1 mA
V(BR)EBO
5
-
-
V
Collector Cutoff Current
at VCB = 30 V
ICBO
-
-
100
nA
Emitter Cutoff Current
at VEB = 5 V
IEBO
-
-
100
nA
Collector Emitter Saturation Voltage
at IC = 1.5 A, IB = 30 mA
VCE(sat)
-
-
2
V
Base Emitter Voltage
at VCE = 2 V, IC = 500 mA
VBE
-
-
1
V
Transition Frequency
at VCE = 2 V, IC = 500 mA
fT
-
120
-
MHz
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
-
40
pF


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