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ST-2SC3112 Datasheet(Fiches technique) 1 Page - SEMTECH ELECTRONICS LTD.

Numéro de pièce ST-2SC3112
Description  NPN Silicon Epitaxial Planar Transistor
Télécharger  2 Pages
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

ST-2SC3112 Datasheet(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

  ST-2SC3112 Datasheet HTML 1Page - SEMTECH ELECTRONICS LTD. ST-2SC3112 Datenblatt HTML 2Page - SEMTECH ELECTRONICS LTD.  
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Dated : 17/04/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SC3112
NPN Silicon Epitaxial Planar Transistor
for general purpose and switching applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
50
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
30
mA
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 6 V, IC = 2 mA
Current Gain Group A
B
hFE
hFE
600
1200
-
-
1800
3600
-
-
Collector Cutoff Current
at VCB = 50 V
ICBO
-
-
100
nA
Emitter Cutoff Current
at VEB = 5 V
IEBO
-
-
100
nA
Collector Base Breakdown Voltage
at IC = 100 A
V(BR)CBO
50
-
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
50
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 A
V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
VCE(sat)
-
-
0.25
V
Gain Bandwidth Product
at VCE = 10 V, IC = 10 mA
fT
100
-
-
MHz
Collector Output Capacitance
at VCB = 10 V, IE = 0, f = 1 MHz
Cob
-
3.5
-
pF
1.Emitter 3.Collector 2.Base
TO-92 Plastic Package
Weight approx. 0.19g


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