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MPS3638A Fiches technique(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

No de pièce MPS3638A
Description  PNP Silicon Epitaxial Planar Transistor
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

MPS3638A Fiches technique(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

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Dated : 14/03/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
MPS3638A
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
25
V
Collector Emitter Voltage
-VCEO
25
V
Emitter Base Voltage
-VEBO
4
V
Collector Current
-IC
500
mA
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 10 V, -IC = 1 mA
at -VCE = 10 V, -IC = 10 mA
at -VCE = 1 V, -IC = 50 mA
at -VCE = 2 V, -IC = 300 mA
hFE
hFE
hFE
hFE
80
100
100
20
-
-
-
-
-
-
-
-
Collector Cutoff Current
at -VCE = 15 V
-ICES
-
35
nA
Emitter Cutoff Current
at -VEB = 3 V
-IEBO
-
35
nA
Collector Base Breakdown Voltage
at -IC = 100 µA
-V(BR)CBO
25
-
V
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
25
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
-V(BR)EBO
4
-
V
Collector Emitter Saturation Voltage
at -IC = 50 mA, -IB = 2.5 mA
at -IC = 300 mA, -IB = 30 mA
-VCEsat
-VCEsat
-
-
0.25
1
V
V
Base Emitter Saturation Voltage
at -IC = 50 mA, -IB = 2.5 mA
at -IC = 300 mA, -IB = 30 mA
-VBEsat
-VBEsat
-
0.8
1.1
2
V
V
Gain Bandwidth Product
at -VCE = 3 V, -IC = 50 mA, f = 100 MHz
fT
150
-
MHz
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Ccbo
-
10
pF
1.Emitter 2.Base 3.Collector
TO-92 Plastic Package
Weight approx. 0.19g


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