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NBXSBB021 Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce NBXSBB021
Description  Clock Oscillator
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NBXSBB021 Fiches technique(HTML) 3 Page - ON Semiconductor

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NBXSBA021, NBXSBB021
http://onsemi.com
3
Table 5. DC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = -40°C to +85°C) (Note 2)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
IDD
Power Supply Current (Note 2)
75
100
mA
VIH
OE Input HIGH Voltage
2000
VDD
mV
VIL
OE Input LOW Voltage
GND - 300
800
mV
IIH
Input HIGH Current
OE
-100
+100
mA
IIL
Input LOW Current
OE
-100
+100
mA
VOH
Output HIGH Voltage (Note 2)
VDD = 3.3 V
VDD-1195
2105
VDD-945
2355
mV
VOL
Output LOW Voltage (Note 2)
VDD = 3.3 V
VDD-1945
1355
VDD-1600
1700
mV
VOUTPP
Output Voltage Amplitude (Note 2)
700
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to VDD-2 V. See Figure 4.


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