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ST2SC380 Fiches technique(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

No de pièce ST2SC380
Description  NPN Silicon Epitaxial Planar Transistor
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

ST2SC380 Fiches technique(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

  ST2SC380 Datasheet HTML 1Page - SEMTECH ELECTRONICS LTD. ST2SC380 Datasheet HTML 2Page - SEMTECH ELECTRONICS LTD.  
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Dated : 06/05/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
TO-92 Plastic Package
Weight approx. 0.19g
ST 2SC380
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier application
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups R,
O, and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
35
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
4
V
Collector Current
IC
50
mA
Emitter Current
-IE
50
mA
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
125
O
C
Storage Temperature Range
TS
-55 to +125
O
C
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 12 V, IC = 2 mA
Current Gain Group
R
O
Y
hFE
hFE
hFE
40
70
120
-
-
-
80
140
240
-
-
-
Collector Cutoff Current
at VCB = 35 V
ICBO
-
-
0.1
µA
Emitter Cutoff Current
at VEB = 4 V
IEBO
-
-
0.1
µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
VCE(sat)
-
-
0.4
V
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
VBE(sat)
-
-
1
V
Transition Frequency
at VCE = 10 V, IC = 1 mA
fT
100
-
400
MHz
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
1.4
2
3.2
pF
Collector Base Time Constant
at VCE = 10 V, -IE = 1 mA, f = 30 MHz
Cc,rbb’
10
-
50
ps
Power Gain
at VCC = 6 V, f = 10.7 MHz, -IE = 1 mA
Gpe
27
29
33
dB


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