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BCW68 Fiches technique(PDF) 2 Page - SEMTECH ELECTRONICS LTD.

No de pièce BCW68
Description  PNP Silicon Epitaxial Planar Transistor
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

BCW68 Fiches technique(HTML) 2 Page - SEMTECH ELECTRONICS LTD.

  BCW68 Datasheet HTML 1Page - SEMTECH ELECTRONICS LTD. BCW68 Datasheet HTML 2Page - SEMTECH ELECTRONICS LTD.  
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Dated : 06/03/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BCW68
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 10 V, -IC = 100 µA
at -VCE = 1 V, -IC = 10 mA
at -VCE = 1 V, -IC = 100 mA
at -VCE = 2 V, -IC = 500 mA
F
G
H
F
G
H
F
G
H
F
G
H
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
35
50
80
75
120
180
100
160
250
35
60
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
400
630
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector Cutoff Current
at -VCB = 45 V
-ICBO
-
-
20
nA
Emitter Cutoff Current
at -VEB = 4 V
-IEBO
-
-
20
nA
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
60
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
45
-
-
V
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
-VCE(sat)
-
-
0.3
V
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
-
0.7
V
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
-VBE(sat)
-
-
1.25
V
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VBE(sat)
-
-
2
V
Transition Frequency
at -VCE = 5 V, -IC = 50 mA, f = 100 MHz
fT
-
200
-
MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
6
-
pF
Emitter Base Capacitance
at -VBE = 0.5 V, f = 1 MHz
Ceb
-
60
-
pF


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