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MMBTSC3928 Fiches technique(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

No de pièce MMBTSC3928
Description  NPN Silicon Epitaxial Planar Transistor
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Fabricant  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Site Internet  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

MMBTSC3928 Fiches technique(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

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Dated : 05/08/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMBTSC3928
NPN Silicon Epitaxial Planar Transistor
for low frequency amplification applications
The transistor is subdivided into four groups Q, R,
S and T, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
50
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group
at VCE = 6 V, IC = 0.1 mA
Q
R
S
T
hFE
hFE
hFE
hFE
hFE
120
180
270
390
70
-
-
-
-
-
270
390
560
820
-
-
-
-
-
-
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
50
-
-
V
Collector Emitter Breakdown Voltage
at IC = 100 µA
V(BR)CEO
50
-
-
V
Emitter Base Breakdown Voltage
at IC = 100 µA
V(BR)EBO
6
-
-
V
Collector Cutoff Current
at VCB = 50 V
ICBO
-
-
0.1
µA
Emitter Cutoff Current
at VEB = 4 V
IEBO
-
-
0.1
µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
VCE(sat)
-
-
0.3
V
Gain Bandwidth Product
at VCE = 6 V, -IE = 10 mA
fT
-
200
-
MHz
Collector Output Capacitance
at VCB = 6 V, f = 1 MHz
Cob
-
4
-
pF
Noise Figure
at VCE = 6 V, -IE= 0.1 mA, f = 1 KHz, RG = 2 KΩ
NF
-
-
15
dB
SOT-23 Plastic Package


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