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SM150MH Datasheet(Fiches technique) 1 Page - SeCoS Halbleitertechnologie GmbH

Numéro de pièce SM150MH
Description  1.0 Amp Surface Mount Schottky Barrier Rectifiers
Télécharger  2 Pages
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Fabricant  SECOS [SeCoS Halbleitertechnologie GmbH]
Site Internet  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SM150MH Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  SM150MH Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SM150MH Datenblatt HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SM120MH~SM1100MH
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
01-December-2008 Rev. A
Page 1 of 2
1
Cathode
2
Anode
RoHS Compliant Product
A suffix of ?-C? specifies halogen-free and RoHS Compliant
FEATURES
Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
Low profile surface mounted application.
in order to optimize board space.
Low power loss and low forward voltage drop
High surge, high current capability, and high efficiency.
Fast switching for high efficiency.
Guard-ring for overvoltage protection.
Ultra high-speed switching
Silicon epitaxial planar chip, metal silicon junction.
PACKAGING INFORMATION
Small plastic SMD package.
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0110 g (Approximately)
MARKING CODE
Part Number
Marking Code
Part Number
Marking Code
SM120MH
12
SM160MH
16
SM130MH
13
SM180MH
18
SM140MH
14
SM1100MH
10
SM150MH
15
MAXIMUM RATINGS (Ta = 25C unless otherwise specified.)
PART NUMBERS
PARAMETERS
SYMBOL
SM
120
MH
SM
130
MH
SM
140
MH
SM
150
MH
SM
160
MH
SM
180
MH
SM
1100
MH
UNITS
TESTING CONDITIONS
Recurrent Peak
Reverse Voltage (Max.)
VRRM
20
30
40
50
60
80
100
V
RMS Voltage (Max.)
VRMS
14
21
28
35
42
56
70
V
Reverse Voltage (Max.)
VR
20
30
40
50
60
80
100
V
Forward Voltage (Max.)
VF
0.50
0.70
0.85
V
Forward
Rectified Current (Max.)
IO
1.0
A
See Fig.1
Peak Forward Surge Current
IFSM
25
A
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
0.5
VR=VRRM, Ta=25C
Reverse Current (Max.)
IR
10
mA
VR=VRRM, Ta=125C
Thermal Resistance (Typ.)
R?JA
98
C/W
Junction to ambient
Diode Junction
Capacitance (Typ.)
CJ
120
pF
f=1MHz and applied 4V DC
reverse voltage
Storage and Operating
Temperature Range
TSTG, TJ
-65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
C
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
3.30
3.70
D
3.10 (MAX.)
B
1.40
1.80
E
0.80 (TYP.)
C
0.60
1.00
F
0.30 (TYP.)
E
E
F
B
C
D
A
SOD-123MH


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