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BAS70-04-V-GS08 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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BAS70-04-V-GS08 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BAS70-00-V to BAS70-06-V Document Number 85702 Rev. 1.7, 27-Sep-06 Vishay Semiconductors www.vishay.com 1 18439 12 3 12 3 12 3 12 3 Top View Top View BAS70-05-V BAS70-06-V BAS70-04-V BAS70-00-V Small Signal Schottky Diodes, Single & Dual Features • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive volt- age, such as electrostatic discharges • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: SOT23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified 1) Device on fiberglass substrate, see layout on next page Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on fiberglass substrate, see layout on next page Part Ordering code Type Marking Remarks BAS70-00-V BAS70-00-V-GS18 or BAS70-00-V-GS08 73 Tape and Reel BAS70-04-V BAS70-04-V-GS18 or BAS70-04-V-GS08 74 Tape and Reel BAS70-05-V BAS70-05-V-GS18 or BAS70-05-V-GS08 75 Tape and Reel BAS70-06-V BAS70-06-V-GS18 or BAS70-06-V-GS08 76 Tape and Reel Parameter Test condition Symbol Value Unit Repetitive peak reverse voltage VRRM = VRWM = VR 70 V Forward continuous current IF 2001) mA Surge forward current tp < 1 s IFSM 6001) mA Power dissipation1) Ptot 2001) mW Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 5001) K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 125 °C e3 |
Numéro de pièce similaire - BAS70-04-V-GS08 |
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Description similaire - BAS70-04-V-GS08 |
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