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BDX18 Fiches technique(PDF) 1 Page - Savantic, Inc. |
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BDX18 Fiches technique(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power amplification ·Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A IB Base current -7 A PT Total power dissipation TC=25 117 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.5 /W Fig.1 simplified outline (TO-3) and symbol |
Numéro de pièce similaire - BDX18 |
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Description similaire - BDX18 |
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