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2SD1060 Datasheet(Fiches technique) 2 Page - Savantic, Inc.

Numéro de pièce 2SD1060
Description  Silicon NPN Power Transistors
Télécharger  4 Pages
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Fabricant  SAVANTIC [Savantic, Inc.]
Site Internet  http://www.svntc.com
Logo SAVANTIC - Savantic, Inc.

2SD1060 Datasheet(HTML) 2 Page - Savantic, Inc.

  2SD1060 Datenblatt HTML 1Page - Savantic, Inc. 2SD1060 Datasheet HTML 2Page - Savantic, Inc. 2SD1060 Datenblatt HTML 3Page - Savantic, Inc. 2SD1060 Datenblatt HTML 4Page - Savantic, Inc.  
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SavantIC Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SD1060
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=:
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
0.4
V
ICBO
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
280
hFE-2
DC current gain
IC=3A ; VCE=2V
30
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
100
pF
fT
Transition frequency
IC=1A ; VCE=-5V
30
MHz
Switching times
ton
Turn-on time
0.1
µs
ts
Storage time
1.4
µs
tf
Fall time
IC=2.0A; IB1= IB2=0.2A
0.2
µs
hFE-1 classifications
Q
R
S
70-140
100-200
140-280


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