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2SC1309 Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce 2SC1309
Description  Silicon NPN Power Transistors
Télécharger  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC1309 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC1309 Datenblatt HTML 1Page - Inchange Semiconductor Company Limited 2SC1309 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC1309 Datenblatt HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC1309
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
500
V
V(BR)EBO
Emitter-base breakdown votage
IE=1.0mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=1.2 A
10
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1.2 A
2
V
ICBO
Collector cut-off current
VCB=1200V;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=5A ; VCE=10V
10


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