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2SC1226 Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce 2SC1226
Description  Silicon NPN Power Transistors
Télécharger  5 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC1226 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC1226 Datenblatt HTML 1Page - Inchange Semiconductor Company Limited 2SC1226 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC1226 Datenblatt HTML 3Page - Inchange Semiconductor Company Limited 2SC1226 Datenblatt HTML 4Page - Inchange Semiconductor Company Limited 2SC1226 Datenblatt HTML 5Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC1226 2SC1226A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2 A
0.4
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2 A
1.5
V
2SC1226
40
V(BR)CBO
Collector-base
breakdown voltage
2SC1226A
IC=1mA;IE=0
50
V
2SC1226
32
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1226A
IC=10mA; IB=0
40
V
ICBO
Collector cut-off current
VCB=20V; IE=0
1
μA
ICEO
Collector cut-off current
VCE=12V; IB=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=5V
50
220
COB
Output capacitance
IE=0; VCB=5V;f=1MHz
50
pF
fT
Transition frequency
IE=0.5A ; VCB=5V
150
MHz
hFE classifications
P
Q
R
50-100
80-160
100-220


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