STB8444 datasheet(4/8 Pages) SAMHOP

No de pièce	STB8444

Description	N-Channel Enhancement Mode Field Effect Transistor

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Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

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4 / 8 page

STB/P8444

www.samhop.com.tw

Mar,26,2008

4

C rs s

C s s

o

12

10

8

6

4

2

0

2

4

6

8

10

0

ID=80 A

125 C

75 C

25 C

Gate-Source Voltage

Figure 7. On-Resistance vs.

VGS, Gate-Sorce Voltage(V)

Figure 8. Body Diode Forward Voltage

Variation with Source Current

20.0

10.0

1.0

0.0

0.2

0.4

0.6

0.8

1.0

125

125 C

25 C

75 C

VSD, Body Diode Forward Voltage(V)

Cis s

Figure 9. Capacitance

9000

7500

6000

4500

3000

1500

0

5

10

15

20

25

30

VDS, Drain-to Source Voltage(V)

10

8

6

4

2

0

20

40

60

80 100 120 140 160

Figure 10. Gate Charge

V DS = 20V

ID = 25A

Qg, Total Gate Charge(nC)

Figure 11.switching characteristics

1000

100

1

10

6 10

60 100

600

300

2200

T r

T D ( o f f )

T D ( o n )

T f

V DS =20V ,ID=1A

V G S =10V

Rg, Gate Resistance(

Ω)

Figure 12. Maximum Safe

VDS, Drain-Source Voltage (V)

Operating Area

Ver 1.0

100

10

0.1

1

1000

1

10

100

10

0u

s

R

DS

(O

N)

Li

m

it

1m

s

10

m

s

DC

V GS =10V

S ingle P uls e

T c=25 C

Numéro de pièce similaire - STB8444

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Description similaire - STB8444

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STB8444 Fiches technique(PDF) 4 Page - SamHop Microelectronics Corp.

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