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2SA1012 Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce 2SA1012
Description  isc Silicon PNP Power Transistor
Télécharger  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1012 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1012 Datenblatt HTML 1Page - Inchange Semiconductor Company Limited 2SA1012 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1012
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA ; IB= 0
-50
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
B
-0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
B
-1.2
V
ICBO
Collector Cutoff Current
VCB= -50V ; IE= 0
-1
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1
μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -1V
70
240
hFE-2
DC Current Gain
IC= -3A ; VCE= -1V
30
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -4V
60
MHz
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
170
pF
Switching Times
ton
Turn-on Time
0.1
μs
tstg
Storage Time
1.0
μs
tf
Fall Time
IC= -3A ,RL= 10Ω,
IB1= -IB2= -0.15A,VCC= -30V
0.1
μs
hFE-1 Classifications
O
Y
70-140
120-240
isc Website:www.iscsemi.cn
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