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1PS76SB17 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1PS76SB17 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page Schottky barrier diode 1PS76SB17 Features Low forward volatge Guard ring protected ESD > 500 V; Human body model Very small plastic SMD package. Absolute Maximum Ratings Ta = 25 PARAMATER SYMBOL MIN MAX UNIT continuous reverse voltage VR 4V continuous forward current VF 30 mA storage temperature Tstg -65 +150 junction temperature Tj 100 Electrical Characteristics Ta = 25 PARAMATER SYMBOL CONDITIONS TYP MAX UNIT IF = 0.1 mA 300 mV IF = 1 mA 360 450 mV IF = 10 mA 470 600 mV reverse current IR VR = 3 V; 0.15 0.25 A f= 1 MHz;VR = 0 V; 0.8 1 pF f= 1 MHz;VR = 0.5 V; 0.65 pF thermal resistance from junction to ambient Rth j-a note 1 450 K/W Note 1. Refer to SOD323 standard mounting conditions. diode capacitance Cd forward volatge VF Marking Marking S7 SMD Type www.kexin.com.cn 1 Diodes Unit: mm SOD-323 1.7+0.1 -0.1 2.6+0.1 -0.1 0.475 0.375 0.85+0.05 -0.05 1.0max |
Numéro de pièce similaire - 1PS76SB17 |
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Description similaire - 1PS76SB17 |
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