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BUX16 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BUX16
Description  isc Silicon NPN Power Transistors
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX16 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUX16 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX16 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX16/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BUX16
200
BUX16A
250
BUX16B
300
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUX16C
IC= 200mA ; IB= 0
350
V
BUX16
225
BUX16A
300
BUX16B
350
VCER(SUS)
Collector-Emitter
Sustaining Voltage
BUX16C
IC= 200mA ; RBE≤50Ω
400
V
VEBO
Emitter-Base Voltage
IE= 20mA ; IC= 0
6
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.25A
B
2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 1.125A
5.0
V
VBE(on)
Base-Emitter On Voltage
IC= 2A; VCE= 10V
3.0
V
BUX16
VCE= 250V;VBE= -1.5V
VCE= 250V;VBE= -1.5V;TC= 150℃
5
8
BUX16A
VCE= 325V;VBE= -1.5V
VCE= 250V;VBE= -1.5V;TC= 150℃
5
8
BUX16B
VCE= 375V;VBE= -1.5V
VCE= 250V;VBE= -1.5V;TC= 150℃
2
3
ICEV
Collector
Cutoff Current
BUX16C
VCE= 425V;VBE= -1.5V
VCE= 250V;VBE= -1.5V;TC= 150℃
2
3
mA
BUX16/A
5.0
IEBO
Emitter Cutoff Current
BUX16B/C
VEB= 5V; IC=0
2.0
mA
hFE-1
DC Current Gain
IC= 0.4A ; VCE= 10V
15
130
BUX16/A
15
hFE-2
DC Current Gain
BUX16B/C
IC= 2A ; VCE= 10V
12
hFE-3
DC Current Gain
IC= 4.5A ; VCE= 10V
5
COB
Output Capacitance
IE=0 ; VCB= 10V; ftest= 1.0MHz
150
pF
fT
Current-Gain—Bandwidth Product
IC= 0.2A ;VCE= 10V
5
MHz
isc Website:www.iscsemi.cn
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