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MJE5180 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce MJE5180
Description  isc Silicon NPN Power Transistors
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE5180 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
MJE5180/5181/5182
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
MJE5180
120
MJE5181
140
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MJE5182
IC= 30mA ;IB= 0
B
160
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
B
1.5
V
VBE(on)
Base-Emitter On Voltage
IC= 6A; VCE= 4V
2.0
V
MJE5180
VCE= 60V; IB= 0
B
0.7
MJE5181
VCE= 70V; IB= 0
B
0.7
ICEO
Collector
Cutoff Current
MJE5182
VCE= 80V; IB= 0
B
0.7
mA
MJE5180
VCE= 120V;VEB= 0
0.4
MJE5181
VCE= 140V;VEB= 0
0.4
ICES
Collector
Cutoff Current
MJE5182
VCE= 160V;VEB= 0
0.4
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1.0
mA
hFE-1
DC Current Gain
IC= 0.3A; VCE= 4V
30
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
15
100
fT
Current-Gain—Bandwidth Product
IC= 0.5A ;VCE= 10V;ftest= 1.0MHz
1.0
MHz
isc Website:www.iscsemi.cn
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