BPW85 datasheet(1/6 Pages) VISHAY

No de pièce	BPW85

Description	Silicon NPN Phototransistor

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Fabricant	VISHAY [Vishay Siliconix]

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BPW85

Vishay Telefunken

1 (6)

Rev. 3, 16-Nov-99

www.vishay.de

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Document Number 81531

Silicon NPN Phototransistor

Description

BPW85 is a high speed and high sensitive silicon NPN

epitaxial planar phototransistor in a standard T–1 (ø 3

mm) plastic package. Due to its waterclear epoxy the

device is sensitive to visible and near infrared radi-

ation.

The viewing angle of

± 25° makes it insensible to ambi-

ent straylight.

Features

D Fast response times

D High photo sensitivity

D Standard T–1 (ø 3 mm ) clear plastic package

D Axial terminals

D Angle of half sensitivity ϕ = ± 25°

D Suitable for visible and near infrared radiation

D Selected into sensitivity groups

94 8396

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

Tamb = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Collector Emitter Voltage

VCEO

70

V

Emitter Collector Voltage

VECO

5

V

Collector Current

IC

50

mA

Peak Collector Current

tp/T = 0.5, tp x 10 ms

ICM

100

mA

Total Power Dissipation

Tamb x 55 °C

Ptot

100

mW

Junction Temperature

Tj

100

°C

Storage Temperature Range

Tstg

–55...+100

°C

Soldering Temperature

t

x 3 s, 2 mm from case

Tsd

260

°C

Thermal Resistance Junction/Ambient

RthJA

450

K/W

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