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BU180A Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BU180A
Description  isc Silicon NPN Darlington Power Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU180A Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BU180A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB=0
200
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 20mA
B
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 20mA
B
2.0
V
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
1.0
mA
ICBO
Collector Cutoff Current
VCB= 400V;IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC=0
10
mA
hFE
DC Current Gain
IC= 5A ; VCE= 5V
200
isc Website:www.iscsemi.cn
2


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